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Your search returned 23 records. Click on the hyperlinks to view further details of Titles.. |
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Magazine Name : Ieee Transactions On Electron Devices
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Year : 1999 Volume number : 46 Issue: 08 |
Reliability Testing Of Inp Hemt,S Using Electrical Stress Methods
(Article)
Subject:
Fet'S
,
Indium Compounds
,
Reliability Testing
,
Stress
Author:
Mattia
Borgarino
Roberto
Menozzi
Koen Van Der
Zanden
page:
1570
-
1576
Noise Parameter Optimization Of Uhv/Cvd Sige Hbt'S For Rf And Microwave Applications
(Article)
Subject:
Ac Simulation
,
Bipolar Technology
,
Chain Noisytwo-Port Representation
Author:
Guofu
Niu
William E.
Ansley
Charles S.
Webster
page:
1589
-
1598
Role Of Neutral Base Recombination In High Gain Algaas/Gaas Hbt'S
(Article)
Subject:
Algaas
,
Gaas
,
Heterojunction Bipolar Transistor (Hbt)
,
Minority-Carrier Generation Lifetime
Author:
Roger E
Welser
Noren
Pan
Duy-Phach
Vu
page:
1599
-
1607
Mechanisms For Output Power Expansion And Degragation Of Phemt'S During High-Efficiency Operation
(Article)
Subject:
Charge Carrier Processes
,
Electric Breakdown
,
Reliability
,
Modfets
Author:
Robert E.
Leoni
James C. M.
Hwang
page:
1608
-
1613
High-Temperature, Low Threshold Current, And Uniform Operation 1 X 12 Monolithic A Gainas/Inp Strain-Compensated Multiple Quantum Well Laser Array In 1. 5
(Article)
Subject:
Algainas
,
Highly Reflective Coating
,
Semiconductor Lasers
Author:
Chia-Chang
Lin
Meng-Chyi
Wu
Hung-Ping
Shiao
page:
1614
-
1618
Studies Of Multiplication Process Of A Novel Image Intensifier Of An Amplicied Metal-Oxide-Semiconductor Imager Overlaid With Electron-Bombarded Amorphous Silicon
(Article)
Subject:
Ami
,
Eb-Gain
,
Rutherford Scattering
Author:
Kazuhisa
Taketoshi
Fumihiko
Andoh
page:
1619
-
1622
A Newlook Atimpact Ionization Part I A Theoryofgain,Nois, Breakdown Probability, Andfrequency Response
(Article)
Subject:
Breakdown
,
Frequency Response
,
Noise
Author:
R. J.
Mcintyre
page:
1623
-
1631
A New Look At Impact Ionization Part Ii Gain And Noise In Short Avalanchephotodiodes
(Article)
Subject:
Impact Ionization
,
Gain And Phase Margins
,
Avalanche Photodiodes
Author:
P.
Yuan
C
Hu
K.A.
Anselm
page:
1632
-
1639
Two-Dimensional Doping Profile Characterization Of Mosfet'S By Inverse Modeling Using Characteristics In The Subthreshold Region
(Article)
Subject:
Doping Profiles
,
Halo Doping
,
Inverse Modelling
,
Mos-Fft
Author:
Zachary K.
Lee
Michael B.
Mcllrath
Dimitri A.
Antoniadis
page:
1640
-
1649
Impact Of Tunnel Currents And Channel Resistance On The Characterization Of Channel Inversion Layer Charge And Polysilicon-Gate Depletion Of Sub-20-20-A Gate Oxide Mosfet'S
(Article)
Subject:
Polysilicon-Gate Depletion
,
Tunnel Currents
,
Ultrathin Gate Oxide
Author:
Khaled
Ahmed
Effiong
Ibok
Bob
Ogle
page:
1650
-
1655
A Compact Double-Gate Mosfet Model Comprising Quantum-Mecanical And Nonstatic Effects
(Article)
Subject:
Double-Gate Mosfet
,
Quantum-Effect Semiconductor Devices
,
Very-Large-Scale-Integration
Author:
G
Baccarani
S
Reggiani
page:
1656
-
1666
Macromodeling Of Single-Electron Transistors For Efficient Circuit Simulation
(Article)
Subject:
Compact Modeling
,
Single-Electron Tunneling Junction
Author:
Yun Seop
Yu
Sung Woo
Hwang
Doyeol
Ahn
page:
1667
-
1671
An Asymmetrically Doped Buried-Layer Structure For Low-Voltage Mixed Analog-Digital Cmos Lsi'S
(Article)
Subject:
Asymmetricaldoped Buried Iayer
,
Drain Junction Capacitance
,
Transconductance
Author:
Masafumi
Miyamoto
Kenji
Toyota
Koichi
Seki
page:
1699
-
1704
A Study Of Interface Trap Generation By Fowler-Nordheim And Substrate-Hot-Carrier Stresses Fo 4-Nm Thick Gate Oxides
(Article)
Subject:
Hot Carrier
,
Interface Traps
,
Mos Device
,
Stress Measurement
Author:
Jao-Hsian
Shiue
Joseph Ya-Min
Lee
Tien-Sheng
Chao
page:
1705
-
1710
Impact Of Super-Steep-Retrograde Channel Doping Profiles On The Performance Of Scaled Devices
(Article)
Subject:
Channel Engineering
,
Mos Device Design
Author:
Indranil
De
Carlton M.
Osburn
page:
1711
-
1717
Suppression Of Random Dopant-Induced Threshold Voltage Fluctuations In Sub Mosfet'S With Epitaxial And Doped Chanels
(Article)
Subject:
Doping
,
Fluctuations
,
Mosfet
,
Semiconductor Device Simulation
Author:
Asen
Asenov
Subbash
Saini
page:
1718
-
1724
On The Geometry Dependence Of The Noise In Cmos Compatible Junction Diodes
(Article)
Subject:
Diodes
,
Low-Frequency Noise
,
Silicon
Author:
Eddy
Simoen
C
Claeys
page:
1725
-
1732
An Intelligent Power Ic With Reverse Battery Protection For Fast- Switching Hig-Side Solenoid Drive
(Article)
Subject:
Intelligent Control
,
Power Integrated Circuits
,
Power Mosfet
Author:
Kozo
Sakamoto
Yasuhiro
Nunogawa
Toyomasa
Kouda
page:
1775
-
1781
Determination Of The Excess Carrier Lifetime In The Colector Region Of Silicon Power Bipolar Transistors
(Article)
Subject:
Excess Carrier Lifetime
,
Nondestructive Test
,
Switching
Author:
Yu
Wu
Johnny K O
Sin
Zhi-Tao
Guo
page:
1782
-
1787
A New Lateral Trench-Gate Conductivity Modulated Power Transistor
(Article)
Subject:
Conductivity Modulation
,
Latch-Up
,
Power Integrated Circuits
Author:
Jun
Cai
K. O.
Sin
Philip K. T.
Mok
page:
1788
-
1793
Hall Factors Of Si Nmos Inversion Layers For Magfet Modeling
(Article)
Subject:
Device Simulation
,
Hall Effect
,
Inversion
Author:
C
Jungemann
D.
Dudenbostel
B.
Meinerzhagen
page:
1803
-
1809
Three Dimensional Modeling Of Multistage Depressed Collectors
(Article)
Subject:
Cad
,
Multistage Depressed Collectors
,
Twt
Author:
K. R.
Vaden
V. O.
Heinen
J. A.
Dayton
page:
1810
-
1811
The Effect Of Deuterium Passivation At Different Steps Of Cmos Processing On Lifetime Improvements Of Cmos Transistors
(Article)
Subject:
Cmos
,
Deuterium
,
Hot-Carrier
,
Reliability
Author:
Jinji
Lee
Yefim
Epstein
Karl
Hess
page:
1812
-
1813
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